2010, Vol. 27(4): 47803-047803    DOI: 10.1088/0256-307X/27/4/047803
Effects of Annealing Temperature on Structural and Optical Properties of ZnO Thin Films

XU Jian-Ping1,2, SHI Shao-Bo3, LI Lan1,2, ZHANG Xiao-Song1,2, WANG Ya-Xin3, CHEN Xi-Ming4

1Institute of Material Physics, Key Laboratory of DisplayMaterials and Photoelectric Devices (Ministry of Education), TianjinUniversity of Technology, Tianjin 3003842Tianjin Key Laboratory for Photoelectric Materials and Devices,Tianjin University of Technology, Tianjin 3003843Department of Mathematics and Physics, Tianjin University ofTechnology and Education, Tianjin 3002224School of Electronic Information and Communication Engineering,Tianjin University of Technology, Tianjin 300384
收稿日期 2009-09-17  修回日期 1900-01-01
Supporting info

[1] Zhang X Y et al 2007 Chin. Phys. Lett. 24 1032
[2] ÖzgürÜ et al 2005 J. Appl. Phys. 98 041301
[3] Ko H J et al 2000 Appl. Phys. Lett. 76 1905
[4] Li Y F et al 2007 Appl. Phys. Lett. 91 021915
[5] Cui J P et al 2008 Chin. Phys. Lett. 25 2277
[6] Fouchet A et al 2005 J. Appl. Phys. 96 3228
[7] Srinivasan G et al 2008 Superlattice Microst. 43 112
[8] Aleksandra B D and Yu H L 2006 Small 2 944
[9] Wang X H et al 2008 Chin. Phys. Lett. 25 2993
[10] Khare N et al 2006 Adv. Mater. 18 1449
[11] Gawlak C J et al 1983 J. Vac. Sci. Technol. A 1 415
[12] Puchert M K et al 1996 J. Vac. Sci. Technol. A 14 2220
[13] Gupta V and Mansingh A 1996 J. Appl. Phys. 80 1063
[14] Zhi Z Z et al W 2003 J. Phys. D: Appl. Phys. 36 719
[15] Laurent K et al 2008 J. Phys. D: Appl. Phys. 41 195410
[16] Wang Y G et al 2003 J. Appl. Phys. 94 1597
[17] Menon R et al 2008 J. Appl. Phys. 103 094903
[18] Lu J G et al 2006 J. Appl. Phys. 100 073714
[19] Mandal S et al 2008 Mater. Res. Bull. 43 244
[20] Xu P S et al 2003 Nucl. Instrum. Methods B 199 286
[21] Wang H Q et al 2007 J. Phys. D: Appl. Phys. 40 6549
[22] Xu C X et al 2004 Nanotechnology 15 856
[23] Vanheusden K et al 1996 J. Appl. Phys. 79 7983