2010, Vol. 27(4): 48501-048501    DOI: 10.1088/0256-307X/27/4/048501
A Low-Voltage Silicon Light Emitting Device in Standard Salicide CMOS Technology

WANG Wei1, HUANG Bei-Ju1, DONG Zan1, LIU Hai-Jun1, ZHANG Xu1, GUAN Ning1, CHEN Jin1, GUO Wei-Lian2, NIU Ping-Juan2, CHEN Hong-Da1

1State Key Laboratory for Integrated Optoelectronics,Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000832School of Information and Communication, Tianjin PolytechnicUniversity, Tianjin 300160
收稿日期 2009-09-01  修回日期 1900-01-01
Supporting info

[1] Salib M, Ling L, Jones R, Morse M, Liu A, Samara-Rubio D, Alduino D and Paniccia M 2004 Int. Technol. J. 8 143
[2] Tsybeskov L, Lockwood D J and Ichikawa M 2009 Proc. IEEE 0018-9219 1161
[3] Canham L T 1990 Appl. Phys. Lett. 57 1046
[4] Lu Z H., Lockwood D J and Baribeau J M 1996 Solid-State Electron. 40 197
[5] Franzó G, Priolo F, Coffa S, Polman A. and Carnera A 1994 Appl. Phys. Lett. 64 2235
[6] Presting H, Kibbel H, Jaros M, Turton R M, Menczigar U, Abstreiter G And Grimmeiss H G 1992 Semicond. Sci. Technol. 7 1127
[7] Snyman L W, Biber A, Aharoni H, Plessis M D, Patterson B D and Seinz P 1998 IEEE Southeastcon 98 Proceedings (Orlando, FL 24--26 April 1998)
[8] Snyman L W, Aharoni H and Plessis M D 2005 IEEE Photon. Technol. Lett. 17 2041
[9] Chen H D, Liu H J, Liu J B, Gu M and Huang B J 2007 Chin. Phys. Lett. 24 265
[10] Snyman L W, Plessis M D, Seevinck E and Aharoni H 1999 IEEE Electron. Device Lett. 20 614
[11] Sze S M and Ng K 2007 Physics of Semiconductor Devices (New York: John Wiley {\&} Sons) p 79
[12] Akil N, Kerns S E, Kerns D V, Hoffmann Jr. A and Charles J P 1999 IEEE Trans. Electron Devices 46 1022
[13] Aharoni H and Plessis M. D 2004 IEEE J. Quantum Electron. 40 557
[14] Seltz P, Stelgmeler E F, Auderset H, Delley B and Kramer J 1993 Sensors and Actuators A 1 37-38 521