|
[1] Hasegawa H, T Fukazawa and Aida T 1989 Japn. J. Appl. Phys. 28 L2210
[2] Yoshida A, Tamura H 1991 J. Appl. Phys. 70 4976
[3] Suzuki S and Yamamoto T 1997 J. Appl. Phys. 81 6830
[4] Muraoka Y and Muramatsu T 2004 Appl. Phys. Lett. 85 2950
[5] Liu Z and Zhu Y B 2005 Supercond. Sci. Technol. 18 438
[6] Ramadan W, Ogale S B et al 2005 Phys. Rev. B 72 205333
[7] Sun J R, Xiong C M et al 2005 Appl. Phys. Lett. 87 222501
[8] Xiang X Q, Qu J F et al 2007 Appl. Phys. Lett. 90 132513
[9] Guo Y F, Chen L M et al 2007 J. Phys. D: Appl. Phys. 40 4578
[10] Zhang H J, Zhang X P et al 2009 Appl. Phys. Lett. 94 092111
[11] Guo Y F, Guo X et al 2009 Appl. Phys. Lett. 94 143506
[12] Kao H L, Kwo J et al 1991 Appl. Phys. Lett. 59 2748
[13] Guo Y F, Chen L M et al 2006 Physica C 450 96
[14] Guo Y F, Chen L M et al 2007 Physica C 453 64
[15] Cieplak M Z, Berkowski M et al 1994 Appl. Phys. Lett. 65 3383
[16] Pan S, Ng K W et al 1987 Phys. Rev. B 35 7220
[17] Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley) chap 2 p 84
[18] Werner J H and Güttler H H 1991 J. Appl. Phys. 69 1522
[19] Card C and Rhodreick E H 1971 J. Phys. D 4 1589
[20] Dharmadasa I M, Roberts G G et al 1982 J. Phys. D 15 901
[21] Tung R T 1991 Appl. Phys. Lett. 58 2821
[22] Shi J P, Zhao YG et al 2008 Appl. Phys. Lett. 92 132501
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