2010, Vol. 27(7): 77201-077201    DOI: 10.1088/0256-307X/27/7/077201
Band Structures of Metal-Oxide Capped Graphene: A First Principles Study

LIU Han, SUN Qing-Qing, CHEN Lin, XU Yan, DING Shi-Jin, ZHANG Wei, ZHANG Shi-Li

State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433
收稿日期 2010-03-05  修回日期 1900-01-01
Supporting info

[1] Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V and Firsov A A 2004 Science 306 666
[2] Novoselov K S, A K Geim A K, Morozov S V, Jiang D, Katsnelson M I, Grigorieva I V, Dubonos S V and Firsov A A 2005 Nature 438 197
[3] Shon N H and Ando T 1998 J. Phys. Soc. Jpn. 67 2421
[4] Ando T, Zheng Y and Suzuura H 2002 J. Phys. Soc. Jpn. 71 1318
[5] Gusynin V P and Sharapov S G 2005 Phys. Rev. Lett. 95 146801
[6] Katsnelson M I, Novoselov K S and Geim A K 2006 Nature Phys. 2 620
[7] Brink J V D 2007 Nature Nanotechonol. 2 199
[8] Son Y W, Cohen M L, and Louie S G 2006 Nature 444 347
[9] Ohta T, Bostwick T, Seyller T, Horn K and Rotenberg E 2006 Science 313 951
[10] Elias D C, Nair R R, Mohiuddin T M G, Morozov S V, Blake P, Halsall M P, Ferrari A C, Boukhvalov D W, Katsnelson M I, Geim A K and Novoselov K S 2009 Science 323 610
[11] Zhou S Y, Gweon G H, Fedorov A V, First P N, Heer W A, Lee D H, Guinea F, Castro Neto A H and Lanzara A 2007 Nature Mater. 6 770
[12] Mattausch A and Pankratov O 2007 Phys. Rev. Lett. 99 076802
[13] Farjam M and Rafii-Tabar H 2009 Phys. Rev. B 79 045417
[14] Shemella P and Nayak S K 2009 Appl. Phys. Lett. 94 032101
[15] Wang X, Ouyang Y, Li X, Wang H, Guo J and Dai H 2008 Phys. Rev. Lett. 100 206803
[16] Sun Q Q, Laha A, Ding S J, Zhang D W, Osten H J and Fissel A 2008 Appl. Phys. Lett. 92 152908
[17] Kresse G and Hafner 1993 J. Phys. Rev. B 47 558
[18] Kresse G and Furthmüller 1996 J. Phys. Rev. B 54 11169
[19] Kresse G and Furthmüller J 1996 Comput. Mater. Sci. 6 15
[20] Tsai W, Carter R J, Nohira H, Caymax M, Conard T, Cosnier V, DeGendt S, Heyns M, Petry J, Richard O, Vandervorst W, Young E, Zhao C, Maes J, Tuominen M, Schulte W H, Garfunkel E~and Gustafsson T 2003 Microelectron. Engin. 65 259
[21] Yazyev O V 2008 Phys. Rev. Lett. 101 037203
[22] Han M Y, Özyilmaz B, Zhang Y and Kim P 2007 Phys. Rev. Lett. 98 206805
[23] Ito J, Nakamura J and Natori A 2008 J. Appl. Phys. 103 113712