2007, Vol. 24(2): 516-517    DOI:
A Comparison between AlN Films Grown by MOCVD Using Dimethylethylamine Alane and Trimethylaluminium as the Aluminium Precursors
HU Wei-Guo1, LIU Xiang-Lin1, ZHANG Pan-Feng1, ZHAO Feng-Ai1, JIAO Chun-Mei1, WEI Hong-Yuan1, ZHANG Ri-Qing1, WU Jie-Jun1, CONG Guang-Wei1, PAN Yi2
1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Department of Chemistry, Nanjing University, Nanjing 210093
收稿日期 2006-09-26  修回日期 1900-01-01
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