2007, Vol. 24(2): 516-517 DOI: | ||
A Comparison between AlN Films Grown by MOCVD Using Dimethylethylamine Alane and Trimethylaluminium as the Aluminium Precursors | ||
HU Wei-Guo1, LIU Xiang-Lin1, ZHANG Pan-Feng1, ZHAO Feng-Ai1, JIAO Chun-Mei1, WEI Hong-Yuan1, ZHANG Ri-Qing1, WU Jie-Jun1, CONG Guang-Wei1, PAN Yi2 | ||
1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Department of Chemistry, Nanjing University, Nanjing 210093 | ||
收稿日期 2006-09-26 修回日期 1900-01-01 | ||
Supporting info | ||
[1] Sun W, Adivarahan V, Shatalov M, Lee Y, Wu S, Yang J, Zhang J and [2] Hanlon A, Pattison P M, Kaeding J F, Sharma R, Fini P and Nakamura [3] Yoshitaka T, Makoto K and Toshiki M 2006 Nature 44 325 [4] Hirayama H, Enomoto Y, Kinoshita A, Harita A and Aoyagi Y 2002 [5] Bliss D F, Tassev V L, Weyburne D and Bailey J S 2003 J. [6] Zhang J P, Asif Khan M, Sun W H, Wang H M, Chen C Q, Fareed Q, [7] Wang J F, Zhang B S, Zhang J C, Zhu J J, Wang Y T, Chen J, Liu W, [8] Ohba Y, Sato R and Kaneko K 2001 Jpn. J. Appl. Phys. 40 [9] Li D S, Chen H, Yu H B, Zheng X H, Huang Q and Zhou J M 2004 [10] Han X X, Wu J J, Li J M, Cong G W, Liu X L, Zhu Q S, Wang Z G 2005 [11] Nam K B, Li J, Lin J Y and Jiang H X 2004 Appl. Phys. Lett. [12] Bertolet D C, Liu Herng and Rogers J W Jr 1994 J. Appl. [13] Kidder J N, Kuo J S, Ludviksson A, Pearsall T P, Roger J W Jr, [14] Amano H, Sawaki N, Akasaki I and Toyoda Y 1986 Appl. [15] Akasaki I, Amano H, Koide Y, Hiramatsu K and Sawaki N 1989 J. [16] Ohba Yand Sato R 2000 J. Cryst. Growth 221 258 [17] Nakamura F, Hashimoto S, Hara M, Imanaga S, Ikeda M and Kawai H [18] Raghavan S and Redwing J M 2004 J. Appl. Phys. 96 5 [19] Chen P, Xie S Y, Chen Z Z, Zhou Y G, Shen B, Zhang R, Zheng Y D, [20] Wuu D S, Horng R H, Tseng W H, Lin W T and Kung C Y 2000 J. |
||