2007, Vol. 24(3): 781-783 DOI: | ||
Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performance | ||
CAI Yan-Fei 1, ZHOU Peng 1, LIN Yin-Yin 1, TANG Ting-Ao 1, CHEN Liang-Yao 2, LI Jing 2, QIAO Bao-Wei 3, LAI Yun-Feng 3, FENG Jie 3, CAI Bing-Chu 3, CHEN Bomy4 | ||
1Department of Microelectronics, ASIC & System State Key Lab, Fudan University, Shanghai 2004332Department of Optical Science and Engineering, Fudan University, Shanghai 2004333Research Institute of Micro/Nanometer Technology, Shanghai Jiao Tong University, Shanghai 2000304Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA94086, U.S.A. | ||
收稿日期 2006-10-10 修回日期 1900-01-01 | ||
Supporting info | ||
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