[1] Arunagiri T N, Zhang Y, Chyan O et al 2005 Appl. Phys.
Lett. 86 083104

[2] Qu X P, Tan J J, Zhou M et al 2006 Appl. Phys. Lett. 88 151912

[3] Wang Q, Ekerdt J G, Gay D et al 2004 Appl. Phys. Lett.
84 1380

[4] Dey S K, Goswami J, Gu D et al 2004 Appl. Phys. Lett. 84 1606

[5] Kim H, 2003 J. Vac. Sci. Technol. B 21 2231

[6] Aaltonen T, Al\'en P and Ritala M 2003 Chemical Vapour
Deposition 9 45

[7] Aaltonen T, Ritala M and Arstila K 2004 Chemical Vapour
Deposition 10 215

[8] Kwon O K, Kwon S H, Park H S, and Kang S W 2004 J.
Electrochem. Soc. C 151 753

[9] Kwon O K, Kwon S H, and Park H S 2004 Electrochem.
Solid-State Lett. C 7 46

[10] Kang S Y, Hwang C S and Kim H J 2005 J. Electrochem.
Soc. C 152 15 (pretreatment)

[11] Han H, Kim J J and Yoon D Y 2004 J. Vac. Sci. Technol.
A 22 1120

[12] Aaltonen T, Rahtu A and Ritala M 2003 Electrochem.
Solid-State Lett. C 6 130

[13] Dey S K, Goswami J, Das A et al 2003 J. Appl. Phys.
94 774