| 2007, Vol. 24(8): 2242-2244 DOI: | ||
| High-Power Diode-Side-Pumped Intracavity-Frequency-Doubled Continuous Wave 532nm Laser | ||
| ZHANG Yu-Ping1,2, ZHANG Hui-Yun2, ZHONG Kai2, LI Xi-Fu2, WANG Peng2, YAO Jian-Quan2 | ||
| 1College of Science, Shandong University of Science and Technology, Qingdao 2665102Key Laboratory of Optoelectrics Information Science and Technology (Ministry of Eduction), Institute of Laser and Optoelectronics, College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072 | ||
| 收稿日期 2007-05-09 修回日期 1900-01-01 | ||
| Supporting info | ||
[1] Peng X Y, Xu L and Asundi A 2005 Appl. Opt. 44 803 [2] He J L, Hou W, Zhang H L et al 2000 Chin. J. Lasers 27 481 [3] Bai Y, Li L, Chen H Wi et al 2004 Chin. Phys. Lett. [4] Ba J T and Chen G F 2002 Opt. Laser Technol. 34 333 [5] Louis M D and Richard W 2007 Opt. Lett. 32 802 [6] Mukhopadhyay P K, Sharma S K, Ranganathan K, Gupta P K and Nathan T [7] Kojima T, Fujikawa S and Yasui K I 1999 EEE J. Quantum [8] Sungman L, Mijeong Y, Hyun S K, Byung He C and Sungsoo S 2002 |
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