2007, Vol. 24(8): 2419-2422 DOI: | ||
GaN MOS-HEMT Using Ultra-Thin Al2O3 Dielectric Grown by Atomic Layer Deposition | ||
YUE Yuan-Zheng, HAO Yue, FENG Qian, ZHANG Jin-Cheng, MA Xiao-Hua, NI Jin-Yu | ||
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071 | ||
收稿日期 2007-03-20 修回日期 1900-01-01 | ||
Supporting info | ||
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