2007, Vol. 24(10): 2938-2941 DOI: | ||
Barrier Enhancement Effect of Postannealing in Oxygen Ambient on Ni/AlGaN Schottky Contacts | ||
SANG Li-Wen, QIN Zhi-Xin, CEN Long-Bin, CHEN Zhi-Zhong, YANG Zhi-Jian, SHEN Bo, ZHANG Guo-Yi | ||
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Research Center for Wide Gap Semiconductor, School of Physics, Peking University, Beijing 100871 | ||
收稿日期 2007-05-09 修回日期 1900-01-01 | ||
Supporting info | ||
[1] Wang X L, Zhao D G, Yang H and Liang J W 2007 Chin. Phys. [2] Collins C J, Chowdhury U, Wong M M, Yang B, Beck A L, Dupuis R D [3] Biyikli N, Kimukin I, Kartaloglu T, Aytur O and Ozbay E 2003 [4] Chen C H, Chang S J, Su Y K, Chi G C, Chi J Y, Chang C A, Sheu J K [5] Gila B P, Hlad M, Onstine A H, Frazier R, Thaler G T, Herrero A, [6] Bradleya S T and Goss S H 2005 J. Appl. Phys. 97 084502 [7] Chen L C, Chen F R and Kai J J 1999 J. Appl. Phys. 86 [8] Kim H, Schuette M, Jung H, Song J H, Lee J and Lu W 2006 Appl. [9] Sze S M 1969 Physics of Semiconductor Devices (New York: [10] Yu L S, Liu Q Z, Xing Q J, Qiao D J and Lau S S 1998 J. Appl. [11] Kang H C, Seo S H and Jang H W 2003 Appl. Phys. Lett. [12] Hu C Y, Qin Z X, Feng Z X, Chen Z Z, Yang H, Yang Z J, Yu T J, Hu [13] Sawada T, Ito Y, Imai K, Suzuki K, Tomozawa H and Sakai S 2000 |
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