2007, Vol. 24(11): 3237-3240 DOI: | ||
Strain Compensated AlInGaAs/InGaAs/InAs Triangular Quantum Wells for Lasing Wavelength beyond 2μm | ||
GU Yi, ZHANG Yong-Gang, LIU Sheng | ||
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 | ||
收稿日期 2007-05-07 修回日期 1900-01-01 | ||
Supporting info | ||
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