| 2008, Vol. 25(4): 1438-1441 DOI: | ||
| Origin of Room-Temperature Ferromagnetism for Cobalt-Doped ZnO Diluted Magnetic Semiconductor | ||
| PENG Long1, ZHANG Huai-Wu1, WEN Qi-Ye1, SONG Yuan-Qiang1, SU Hua1, John Q. Xiao2 | ||
| 1State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 6100542Department of Physics and Astronomy, University of Delaware, Newark, DE 19716, USA | ||
| 收稿日期 2007-09-12 修回日期 1900-01-01 | ||
| Supporting info | ||
[1] Hong N H, Sakai J, Prellier W, Hassini A, Ruyter A and Gervais F [2] Coey J M D, Douvalis A P, Fitzgerald C B and Venkatesan M 2004 [3] Hong N H, Sakai J, Hassini A and Ruyter A 2005 J. Phys.: [4] Weng H M, Yang X P, Dong J M, Mizuseki H, Kawasaki M and Kawazoe Y [5] Jaffe J E, Droubay T C and Chambers S A 2005 J. Appl. [6] Schwartz D A and Gamelin 2004 Adv. Mater. 16 2115 [7] Hong N H, Sakai J, Poirot N and Brize V 2006 Phys. Rev. [8] Coey J M D, Venkatesan M and Fitzgerald C B 2005 Nat. [9] Venkatesan M, Fitzgerald C B, Lunney J G and Coey J M D 2004 |
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