1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 2School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190 3Center for Excellence in Topological Quantum Computation, Beijing 100190 4Songshan Lake Materials Laboratory, Dongguan 523808 5School of Physics & Mathematical Sciences, Nanyang Technological University, Singapore 639798, Singapore
Abstract：Pressure-dependent properties in layered transition-dichalcogenides are important for our understanding of their basic structures and applications. We investigate the electronic structure in MoSe$_{2}$ monolayer under external pressure up to 5.73 GPa by Raman spectroscopy and photoluminescence (PL) spectroscopy. The double resonance out-of-plane acoustic mode ($2ZA$) phonon is observed in Raman spectroscopy near 250 cm$^{-1}$, which presents pronounced intensity and pressure dependence. Significant variation in $2ZA$ peak intensity under different pressures reflects the change in electronic band structure as pressure varies, which is consistent with the blue shift in PL spectroscopy. The high sensitivity in both Raman and PL spectroscopy under moderate pressure in such a two-dimensional material may have many advantages for optoelectronic applications.
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2019, Vol. 36 
