High Ferroelectricities and High Curie Temperature of BiInO$_{3}$PbTiO$_{3}$ Thin Films Deposited by RF Magnetron Sputtering Method
Ke-xue Sun1,2**, Shu-yi Zhang2, Kiyotaka Wasa2,3
1College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 2Key Laboratory of Modern Acoustics, Institute of Acoustics, Nanjing University, Nanjing 210093 3Faculty of Science, Yokohama City University, Yokohama 236-0027, Japan
Abstract：Properties of ferroelectric $x$BiInO$_{3}$-($1-x$)PbTiO$_{3}$ ($x$BI-($1-x$)PT) thin films deposited on (101) SrRuO$_{3}$/(200) Pt/(200) MgO substrates by rf magnetron sputtering method and effects of deposition conditions are investigated. The structures of the $x$BI-($1-x$)PT films are characterized by x-ray diffraction and scanning electron microscopy. The results indicate that the thin films are grown with mainly (001) orientation. The chemical compositions of the films are analyzed by scanning electron probe and the results indicate that the loss phenomena of Pb and Bi elements depend on the pressure and temperature during the sputtering process. The sputtering parameters including target composition, substrate temperature, and gas pressure are adjusted to obtain optimum sputtering conditions. To decrease leakage currents, 2 mol% La$_{2}$O$_{3}$ is doped in the targets. The $P$–$E$ hysteresis loops show that the optimized $x$BI-($1-x$)PT ($x=0.24$) film has high ferroelectricities with remnant polarization $2P_{\rm r}=80$ $\mu$C/cm$^{2}$ and coercive electric field $2E_{\rm c}=300$ kV/cm. The Curie temperature is about 640$^{\circ}\!$C. The results show that the films have optimum performance and will have wide applications.
. [J]. 中国物理快报, 2018, 35(12): 124301-.
Ke-xue Sun, Shu-yi Zhang, Kiyotaka Wasa. High Ferroelectricities and High Curie Temperature of BiInO$_{3}$PbTiO$_{3}$ Thin Films Deposited by RF Magnetron Sputtering Method. Chin. Phys. Lett., 2018, 35(12): 124301-.
2018, Vol. 35 
