Controllable Fabrication of GeSi Nanowires in Diameter of About 10nm Using the Top-Down Approach
Cheng Zeng1,2 , Yi Li2 , Jin-Song Xia1,2**
1 Huazhong Institute of Electro-Optics, Wuhan 4300742 Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074
Abstract ：Ordered GeSi nanowires with a $\sim$10 nm cross section are fabricated utilizing top-down and Ge condensation techniques. In transmission electron microscopy measurements, the obtained GeSi nanowires exhibit a single-crystal structure and a smooth Ge/SiO$_{2}$ interface. Due to the linear relationship between the cross-section area and the initial pattern size under the self-limited oxidation condition, the cross-section size of GeSi nanowires can be precisely controlled. The Raman spectra reveal a high Ge fraction (up to 97%) and a biaxial strain of the GeSi nanowires. This top-down technique is promising for fabrication of high-performance GeSi nanowire based optoelectronic devices.
收稿日期: 2017-07-25
出版日期: 2017-10-25
:
81.07.Gf
(Nanowires)
62.23.Hj
(Nanowires)
61.46.Km
(Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))
78.30.Er
(Solid metals and alloys ?)
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2017, Vol. 34 
