Fabrication and Characterization of a GaN-Based 320$\times$256 Micro-LED Array
Xiao-Fan Mo, Wei-Zong Xu, Hai Lu**, Dong Zhou, Fang-Fang Ren, Dun-Jun Chen, Rong Zhang, You-Dou Zheng
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
Abstract：Design, fabrication and characterizations of GaN-based blue micro light emitting diode (LED) arrays are reported. The GaN micro-LED array consists of $320\times256$ pixels with a pitch size of 30 μm. Each pixel is $25\times25$ μm$^{2}$ in size, which is designed for backside emission and high density flip-chip packaging. The selected LED pixels being tested exhibit good uniformity in terms of turn-on voltage and reverse leakage current. The efficiency droop behavior and reliability behavior under high forward current stress are also studied. The micro-LED pixel shows improved reliability, which is likely caused by enhanced heat dissipation.
Kim A Y, Gotz W, Steigerwald D A, Wierer J J, Gardner N F, Sun J, Stockman S A, Martin P S, Krames M R, Kern R S and Steranka F M 2001 Phys. Status Solidi A 188 15
2017, Vol. 34 
