Analysis of Effect of Zn(O,S) Buffer Layer Properties on CZTS Solar Cell Performance Using AMPS
Ling-Yan Lin1,2 , Yu Qiu1,2** , Yu Zhang2 , Hao Zhang2
1 Institute of Advanced Photovoltaics, Fujian Jiangxia University, Fuzhou 3501082 College of Electronic Information Science, Fujian Jiangxia University, Fuzhou 350108
Abstract ：The Cu$_{2}$ZnSnS$_{4}$ (CZTS)-based solar cell is numerically simulated by a one-dimensional solar cell simulation software analysis of microelectronic and photonic structures (AMPS-1D). The device structure used in the simulation is Al/ZnO:Al/nZn(O,S)/pCZTS/Mo. The primary motivation of this simulation work is to optimize the composition in the ZnO$_{1-x}$S$_{x}$ buffer layer, which would yield higher conversion efficiency. By varying S/(S+O) ratio $x$, the conduction band offset (CBO) at CZTS/Zn(O,S) interface can range from $-$0.23 eV to 1.06 eV if the full range of the ratio is considered. The optimal CBO of 0.23 eV can be achieved when the ZnO$_{1-x}$S$_{x}$ buffer has an S/(S+O) ratio of 0.6. The solar cell efficiency first increases with increasing sulfur content and then decreases abruptly for $x>0.6$, which reaches the highest value of 17.55% by our proposed optimal sulfur content $x=0.6$. Our results provide guidance in dealing with the ZnO$_{1-x}$S$_{x}$ buffer layer deposition for high efficiency CZTS solar cells.
收稿日期: 2016-06-08
出版日期: 2016-10-27
:
78.40.Fy
(Semiconductors)
78.20.Bh
(Theory, models, and numerical simulation)
02.60.Cb
(Numerical simulation; solution of equations)
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2016, Vol. 33 
