Direct Observation of Carrier Transportation Process in InGaAs/GaAs Multiple Quantum Wells Used for Solar Cells and Photodetectors
Qing-Ling Sun, Lu Wang, Yang Jiang, Zi-Guang Ma, Wen-Qi Wang, Ling Sun, Wen-Xin Wang, Hai-Qiang Jia, Jun-Ming Zhou, Hong Chen**
Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
Abstract ：The resonant excitation is used to generate photo-excited carriers in quantum wells to observe the process of the carriers transportation by comparing the photoluminescence results between quantum wells with and without a p-n junction. It is observed directly in experiment that most of the photo-excited carriers in quantum wells with a p-n junction escape from quantum wells and form photocurrent rather than relax to the ground state of the quantum wells. The photo absorption coefficient of multiple quantum wells is also enhanced by a p-n junction. The results pave a novel way for solar cells and photodetectors making use of low-dimensional structure.
收稿日期: 2016-08-18
出版日期: 2016-10-27
:
68.65.Fg
(Quantum wells)
73.63.-b
(Electronic transport in nanoscale materials and structures)
81.07.St
(Quantum wells)
引用本文:
. [J]. 中国物理快报, 2016, 33(10): 106801-106801.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/33/10/106801
或
https://cpl.iphy.ac.cn/CN/Y2016/V33/I10/106801
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2016, Vol. 33 
