Abstract：P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn$_{3}$N$_{2}$ films. The prepared films are characterized by x-ray diffraction, non-Rutherford backscattering (non-RBS) spectroscopy, x-ray photoelectron spectroscopy, and photoluminescence spectrum. The results show that the Zn$_{3}$N$_{2}$ films start to transform to ZnO at 400$^{\circ}\!$C and the total nitrogen content decreases with the increasing annealing temperature. The p-type films are achieved at 500$^{\circ}\!$C with a low resistivity of 6.33 $\Omega$$\cdot $cm and a high hole concentration of +8.82 $\times$ 10$^{17}$ cm$^{-3}$, as well as a low level of carbon contamination, indicating that the substitutional nitrogen (N$_{\rm O}$) is an effective acceptor in the ZnO:N film. The photoluminescence spectra show clear UV emissions and also indicate the presence of oxygen vacancy (V$_{\rm O}$) defects in the ZnO:N films. The p-type doping mechanism is briefly discussed.
2016, Vol. 33 
