Electrical-Controlled Transport for Surface States in a Dirac Semimetal Quantum Wire
XIAO Xian-Bo1** , LIU Zheng-Fang2 , HE Yang-Ming1 , LI Hui-Li1 , AI Guo-Ping1 , DU Yan1
1 School of Computer Science, Jiangxi University of Traditional Chinese Medicine, Nanchang 3300042 School of Basic Science, East China Jiaotong University, Nanchang 330013
Abstract ：The transport properties of a Dirac semimetal quantum wire with two side gates are theoretically studied by adopting the lattice Green function method. It is found that a residual conductance quantum contributed from the surface states can be switched on or off by tuning the electron energy or the side gates voltage. This ideal switching effect for the surface Dirac electron results from the transversal quantum confinement of the quantum wire in combination with the electrostatic potential induced by the side gates. These findings may provide useful guidance for designing all-electrical topological nanoelectronic devices.
收稿日期: 2015-06-22
出版日期: 2016-01-05
:
73.20.At
(Surface states, band structure, electron density of states)
73.21.Hb
(Quantum wires)
73.23.Ad
(Ballistic transport)
[1] Hasan M Z and Kane C L 2010 Rev. Mod. Phys. 82 3045 2011 Rev. Mod. Phys. 83 1057 2008 Phys. Rev. Lett. 101 246807 2009 Phys. Rev. B 80 205401 2010 Nat. Phys. 6 584 2010 Phys. Rev. B 81 115407 2010 Phys. Rev. B 81 041307 2012 Phys. Rev. B 86 245436 2015 Chin. Phys. B 24 067304 2009 Phys. Rev. Lett. 102 096806 2011 Phys. Rev. B 83 081402(R) 2011 Phys. Rev. B 83 165304 2011 Phys. Rev. Lett. 107 086803 2011 Appl. Phys. Lett. 99 222111 2012 Phys. Rev. B 86 165418 2014 Nanotechnology 25 225201 2007 New J. Phys. 9 356 2011 Phys. Rev. B 83 205101 2011 Phys. Rev. Lett. 107 127205 2012 Phys. Rev. Lett. 108 140405 2012 Phys. Rev. B 85 195320 2013 Phys. Rev. B 88 125427 2014 Science 343 864 2014 Appl. Phys. Lett. 105 031901 2014 Phys. Rev. Lett. 113 027603 2014 Nat. Commun. 5 3786 2014 Sci. Rep. 4 6106 2012 Phys. Rev. B 85 045445 2015 arXiv:1503.07293[cond-mat.mes-hall] 2014 Nat. Mater. 13 851 2014 Phys. Rev. Lett. 113 246402 2014 arXiv:1412.4380[cond-mat.mtrl-sci] 2015 ACS Nano 9 8843 1991 Phys. Rev. B 44 8017 1986 Phys. Rev. Lett. 57 1761 2001 Phys. Rev. B 63 165424 2011 Phys. Rev. Lett. 106 206802
[1]
.
[2]
.
[3]
.
[4]
.
[5]
.
[6]
.
[7]
.
[8]
.
[9]
.
[10]
.
[11]
.
[12]
.
[13]
.
[14]
.
[15]
.
2015, Vol. 32 
