Abstract：Optimization of the high power single-lateral-mode double-trench ridge waveguide semiconductor laser based on InGaAsP/InP quantum-well heterostructures with a separate confinement layer is reported. Two different waveguide structures of Fabry–Perot lasers emitting at a wavelength of 1.55 μm are fabricated. The influence of an effective lateral refractive index step on the maximum output power is investigated. A cw single mode output power of 165 mW is obtained for a 1-mm-long uncoated laser.
(Efficiency, stability, gain, and other operational parameters)
引用本文:
. [J]. 中国物理快报, 2015, 32(06): 64203-064203.
KE Qing, TAN Shao-Yang, LU Dan, ZHANG Rui-Kang, WANG Wei, JI Chen. Optimization of High Power 1.55-μm Single Lateral Mode Fabry–Perot Ridge Waveguide Lasers. Chin. Phys. Lett., 2015, 32(06): 64203-064203.
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