Abstract：A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13 mA. The output power exceeds 10 mW at 0 V bias when the injection current of the distributed feedback laser is 100 mA at 25°C. The side mode suppression ratio is over 50 dB. A 32Gb/s eye diagram is measured with a 3.5Vpp nonreturn-to-zero pseudorandom modulation signal at -2.3 V bias. A clearly opening eyediagram with a dynamic extinction ratio of 8.01 dB is obtained.
(Design and performance testing of integrated-optical systems)
引用本文:
. [J]. 中国物理快报, 2015, 32(5): 54205-054205.
ZHOU Dai-Bing, WANG Hui-Tao, ZHANG Rui-Kang, WANG Bao-Jun, BIAN Jing, AN Xin, LU Dan, ZHAO Ling-Juan, ZHU Hong-Liang, JI Chen, WANG Wei. Fabrication of 32 Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology. Chin. Phys. Lett., 2015, 32(5): 54205-054205.
[1] Kotaka I, Wakita K, Okamoto M, Asai H and Kondo Y 1993 IEEE Photon. Technol. Lett.5 61 [2] Aoki M, Takahashi M, Suzuki M, Sano H, Uomi K, Kawano T and Takai A 1992 IEEE Photon. Technol. Lett.4 580 [3] Cheng Y B, Pan J Q, Wang Y, Fan Zhou, Wang B J, Zhao L J, Zhu H L and Wang W 2009 IEEE Photon. Technol. Lett.21 356 [4] Kobayashi W, Arai M, Yamanaka T, Fujiwara N, Fujisawa T, Tadokoro T, Tsuzuki K, Kondo Y and Kano F 2010 J. Lightwave Technol.28 164 [5] Hou L P, Tan M, Haji M, Eddie I and Marsh J H 2013 IEEE Photon. Technol. Lett.25 1169 [6] Cheng Y B, Pan J Q, Zhou F, Zhu H L, Zhao L J and Wang W 2007 Chin. Phys. Lett.24 2128 [7] Li B X, Zhu H L, Zhang J, Zhao Q, Pian J Q, Ding Y, Wang B J, Bian J, Zhao L J and Wang W 2005 Semicond. Sci. Technol.20 917 [8] Zhou D B, Zhang R K, Wang H T, Wang B J, Bian J, An X, Zhao L J, Zhu H L, Ji C and Wang W 2014 Photonics Asia (Beijing 8–11 October 2014) p 926714 [9] Zhang C, Liang S, Zhu H L, Han L S, Lu D and Ji C 2013 Opt. Commun.311 6 [10] Lee S H, Ahn J H, Oh Y K, Ma J S, Choo A G, Kim T I, Kim Y and Jeong J 2001 IEEE Trans. Adv. Packag.24 407 [11] Kobayashi W, Arai M, Fujiwara N, Fujisawa T, Tadokoro T, Tsuzuki K, Yanabaja T and Kano F 2010 The 15th OptoElectronics and Communications Conference Technical Diges (Sapporo 6–9 July 2010) p 840
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