Ion Transportation Study for Thick Gas Electron Multipliers
WANG Bin-Long1, LIU Qian1**, LIU Hong-Bang1,2, ZHOU Xiao-Kang1, CHEN Shi1, GE Dong-Sheng5, HUANG Wen-Qian5, XIE Yi-Gang1,4, ZHENG Yang-Heng1, DONG Yang5, ZHANG Qiang5, JIAO Xin-Da5, WANG Jing5, LI Min5, CHANG Jie5
1School of Physics, University of Chinese Academy of Sciences, Beijing 100049 2Institute of Physics, Guangxi University, Nanning 530004 3Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 4School of Physics and Technology, Wuhan University, Wuhan 430072 5Second Academy of China Aerospace Science and Industry Corporation, Beijing 100049
Abstract：Ion back flow(IBF) is defined as the ions that are generated during multiplication in a thick-gas-electron-multiplier (THGEM) detector flow along the electric field. In order to suppress the IBF effect, we study ion transportation for THGEMs with various high voltages and geometrical parameters. By measuring the currents of all the electrodes of the THGEMs, the effective gain and ion back flow ratio are calculated. The measurement and simulation results reveal that with a staggered triple THGEM configuration, ion back flow can be suppressed to 1% with a proper working high voltage. The gain of the staggered configuration is less than that of the aligned configuration by 5% under the same high voltage condition. The design and the results are presented.
. [J]. 中国物理快报, 2014, 31(12): 122901-122901.
WANG Bin-Long, LIU Qian, LIU Hong-Bang, ZHOU Xiao-Kang, CHEN Shi, GE Dong-Sheng, HUANG Wen-Qian, XIE Yi-Gang, ZHENG Yang-Heng, DONG Yang, ZHANG Qiang, JIAO Xin-Da, WANG Jing, LI Min, CHANG Jie. Ion Transportation Study for Thick Gas Electron Multipliers. Chin. Phys. Lett., 2014, 31(12): 122901-122901.
2014, Vol. 31 
