A C-Band Internally-Matched High Efficiency GaN Power Amplifier
MA Xiao-Hua1,2**, WEI Jia-Xing1,2, CAO Meng-Yi2, LU Yang2, ZHAO Bo-Chao2, DONG Liang1,2, WANG Yi2, HAO Yue1,2
1School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071 2Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071
Abstract：We present a design and realization of a high efficiency C-Band (5.2 GHz–5.8 GHz) internally-matched gallium nitride (GaN) power amplifier (PA). To reduce power dissipation and to achieve high efficiency, both input and output matching networks, along with 2nd-harmonic modulation circuits, are designed accurately according to the source and load optimum impedances extracted by source-pull and load-pull measurements. The PA realizes an excellent rf performance under a pulsed condition, demonstrating a maximum output power of 52.2 dBm (164 W) with at least 13.5 dB gain in the frequency range from 5.2 GHz to 5.8 GHz (10% relative bandwidth). At the same time, a power-added efficiency (PAE) of 69.4% is observed at 5.6 GHz and over 65.0% throughout the whole bandwidth. The PAE is the state-of-art performance for C-band GaN high-electron-mobility transistor PA with such high output power, to the best of our knowledge.
. [J]. 中国物理快报, 2014, 31(10): 108401-108401.
MA Xiao-Hua, WEI Jia-Xing, CAO Meng-Yi, LU Yang, ZHAO Bo-Chao, DONG Liang, WANG Yi, HAO Yue. A C-Band Internally-Matched High Efficiency GaN Power Amplifier. Chin. Phys. Lett., 2014, 31(10): 108401-108401.
[1] Chen W W et al 2013 Chin. Phys. B 22 107303 [2] Zhang K et al 2013 Chin. Phys. B 22 097303 [3] Otsuka H, Yamanaka K, Noto H, Tsuyama Y, Chaki S, Inoue A and Miyazaki M 2008 Microwave Symposium Digest 2008 IEEE MTTS International (Atlanta, America 15–20 June 2008) p 311 [4] Giofrè R, Colantonio P, Giannini F, Pantellini A, Nanni A, Dispenza M and Lanzieri C 2013 Proceedings of European Microwave Integrated Circuits Conference (EuMIC) (Nürnberg Germany 7–8 October 2013) p 180 [5] Yamanaka K, Mori K, Iyomasa K, Ohtsuka H, Noto H, Nakayama M, Kamo Y and Isota Y 2007 Microwave Symposium Digest 2007 IEEE MTT-S International (Honolulu, HI, America 3–8 June 2007) p 1251 [6] Shigematsu H, Inoue Y, Akasegawa A, Yamada M, Masuda S, Kamada Y, Yamada A, Kanamura M, Ohki T, Makiyama K, Okamoto N, Imanishi K, Kikkawa T, Joshin K and Hara N 2009 Microwave Symposium Digest 2009 IEEE MTTS International (Boston, MA 7–12 June 2009) p 1265 [7] Zhong S C, Chen T S, Ren C J, Jiao G, Chen C, Shao K and Yang N B 2008 Proceedings of European Microwave Integrated Circuits Conference (EuMIC) (Amsterdam Nederland 27–28 October 2008) p 91 [8] Dong L, He S B, You F and Lei Q 2012 Proceedings of IEEE Topical Conference Power Amplifiers For Wireless Radio Applications (Santa Clara CA 15–18 January 2012) p 1 [9] Cao M Y et al 2014 Chin. Phys. B 23 037305 [10] Iyomasa K, Yamanaka K, Mori K, Noto H, Ohtsuka H, Nakayama M, Yoneda S, Kamo Y and Isota Y 2007 Microwave Symposium Digest 2007 IEEE MTTS International (Honolulu, HI, America 3–8 June 2007) p 1255 [11] Maehara H, Uchida H, Kosaka N, Kuwata E, Yamanaka K, Nishihara J, Kawashima K and Nakayama M 2012 Proceedings of Microwave Conference (APMC) 2012 Asia-Pacific (Kaohsiung, Taiwan, China 4–7 December 2012) p 358 [12] Colantonio P et al 2006 IEEE Trans. Microwave Theory Tech.54 2713 [13] Yamasaki T, Kittaka Y, Minamide H, Yamauchi K, Miwa S, Goto S, Nakayama M, Kohno M and Yoshida N 2010 Microwave Symposium Digest 2010 IEEE MTTS International (Anaheim, CA, America 23–28 May 2010) p 1384 [14] Cripps S C 2006 Radio-Frequency Power Amplifiers for Wireless Communications (Norwood MA: Artech House) [15] Krishnamurthy K, Martin J, Landberg B, Vetury R and Poulton M J 2008 Microwave Symposium Digest 2008 IEEE MTTS International (Atlanta, America 15–20 June 2008) p 303
2014, Vol. 31 
