Extraction of Channel Length Independent Series Resistance for Deeply Scaled Metal-Oxide-Semiconductor Field-Effect Transistors
MA Li-Juan1 , JI Xiao-Li1** , CHEN Yuan-Cong1 , XIA Hao-Guang1 , ZHU Chen-Xin1 , GUO Qiang2 , YAN Feng1**
1 School of Electronic Science and Engineering, Nanjing University, Nanjing 2100932 Wuhan Xinxin Semiconductor Manufacturing Corporation, Wuhan 430205
Abstract ：The recently developed four Rsd extraction methods from a single device, involving the constant-mobility method, the direct Id –Vgs method, the conductance method and the Y-function method, are evaluated on 32 nm n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs). It is found that Rsd achieved from the constant-mobility method exhibits the channel length independent characteristics. The L -dependent Rsd extracted from the other three methods is proven to be associated with the gate-voltage-induced mobility degradation in the extraction procedures. Based on L -dependent behaviors of Rsd , a new method is proposed for accurate series resistance extraction on deeply scaled MOSFETs.
出版日期: 2014-08-22
:
73.40.Qv
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
85.30.Tv
(Field effect devices)
引用本文:
. [J]. 中国物理快报, 2014, 31(09): 97302-097302.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/31/9/097302
或
https://cpl.iphy.ac.cn/CN/Y2014/V31/I09/97302
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2014, Vol. 31 
