Effects of 1.0–11.5 MeV Electron Irradiation on GaInP/GaAs/Ge Triple-junction Solar Cells for Space Applications
WANG Rong1,2**, LU Ming1,2, YI Tian-Cheng1,2, YANG Kui1,2, JI Xiao-Xia1,2
1Key Laboratory of Beam Technology and Materials Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875 2Beijing Radiation Center, Beijing Normal University, Beijing 100875
Abstract：GaInP/GaAs/Ge triple-junction solar cells are irradiated with 1.0, 1.8, and 11.5 MeV electrons with fluence ranging up to 3×1015, 3×1015, and 3×1014 cm?2, respectively. Their performance degradation effects are analyzed by using current-voltage characteristics, spectral response measurements, and electron irradiation-induced displacements. The degradation rates of the maximum power and the spectral response of the solar cells increase with the electron fluence, and also increase with the increasing electron energy. It is observed that the spectral response of the GaAs middle cell degrades more significantly than that of the GaInP top cell.
. [J]. 中国物理快报, 2014, 31(08): 86103-086103.
WANG Rong, LU Ming, YI Tian-Cheng, YANG Kui, JI Xiao-Xia. Effects of 1.0–11.5 MeV Electron Irradiation on GaInP/GaAs/Ge Triple-junction Solar Cells for Space Applications. Chin. Phys. Lett., 2014, 31(08): 86103-086103.
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