1College of Physics Science and Information Engineering, Hebei Normal University, Shijiazhuang 050024 2Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 3Department of Physics and Electrical Engineering, Handan College, Handan 056005
Abstract：We perform first-principles calculations for ZnO thin films with oxygen vacancy defects. The densities of states, partial atomic densities of states, charge density differences and atomic populations are presented. We show that the SET process, i.e., from a high resistive state to a low resistive state, is attributable to the aggregation and regular arrangement of the oxygen vacancies, which causes the formation of conductive filaments and leads to the low resistive state of the system.
. [J]. 中国物理快报, 2014, 31(05): 57307-057307.
ZHAO Jing, DONG Jing-Yu, ZHAO Xu, CHEN Wei. Role of Oxygen Vacancy Arrangement on the Formation of a Conductive Filament in a ZnO Thin Film. Chin. Phys. Lett., 2014, 31(05): 57307-057307.
2014, Vol. 31 
