Room-Temperature Operation of 2.4 μm InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density
XING Jun-Liang, ZHANG Yu, LIAO Yong-Ping, WANG Juan, XIANG Wei, XU Ying-Qiang, WANG Guo-Wei, REN Zheng-Wei, NIU Zhi-Chuan**
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Abstract ：GaSb-based 2.4 μm InGaAsSb/AlGaAsSb type-I quantum-well laser diode is fabricated. The laser is designed consisting of three In0.35 Ga0.65 As0.1 Sb0.9 /Al0.35 Ga0.65 As0.02 Sb0.98 quantum wells with 1% compressive strain located in the central part of an undoped Al0.35 Ga0.65 As0.02 Sb0.98 waveguide layer. The output power of the laser with a 50-μm-wide 1-mm-long cavity is 28 mW, and the threshold current density is 400 A/cm2 under continuous wave operation mode at room temperature.
出版日期: 2014-04-24
引用本文:
. [J]. 中国物理快报, 2014, 31(05): 54204-054204.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/31/5/054204
或
https://cpl.iphy.ac.cn/CN/Y2014/V31/I05/54204
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2014, Vol. 31 
