An Enhanced Photoelectric Conversion Efficiency of n-Type Crystalline Silicon p–n Junctions Using a Ferroelectric Passivation Layer
LI Zi-Zhen1, TANG Rong-Sheng2, WANG Xiao-Feng1, ZHENG Fen-Gang1**
1Department of Physics and Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006 2Department of Electronic and Information Engineering, Taizhou Polytechnic College, Taizhou 225300
Abstract：A multilayered structure consisting of ferroelectric Pb(Zr,Ti)O3 (PZT) film is deposited by sputtering on the crystalline silicon p-n junction without any buffer layer. The photovoltaic output of the p-n junction is greatly enhanced due to the usage of In2O3:Sn(ITO)/PZT as top surface passivation layers. The short circuit current and photoelectric conversion efficiency of the p-n junction with ITO/PZT ferroelectric films increase about four and six times, respectively, compared with those without any passivation layers. Improvement in the passivated device is mainly attributed to the built-in field at the ITO/PZT interface.
2014, Vol. 31 
