Simulation and Experimentation for Low Density Drain AlGaN/GaN HEMT
WANG Chong** , HE Yun-Long, DING Ning, ZHENG Xue-Feng, ZHANG Peng, MA Xiao-Hua, ZHANG Jin-Cheng, HAO Yue
Key Lab of Wide Band Gap Semiconductor Materials and Devices, and Institute of Microelectronics, Xidian University, Xi'an 710071
Abstract ：In order to improve the breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs), we report a feasible method of low density drain (LDD) HEMT. The fluoride-based plasma treatment using CF4 gas is performed on the drain-side of the gate edge. The channel two-dimensional electron gas (2DEG) concentrations are modulated by fluoride plasma treatment, and the peak electric field at the gate edge is effectively reduced, so the breakdown voltage is improved. The electric field distributions of the LDD-HEMTs are simulated using the Silvaco software, and the peak of the electric field on the gate edge is effectively reduced. Experimental results show that, compared with the conventional HEMT, LDD-HEMTs have a lower reverse leakage current of the gate, and the breakdown voltage is increased by 36%. The current collapse characteristics of the LDD-HEMTs are confirmed by dual-pulse measurement, and an obvious pulse current reduction is due to the surface states by implanting F ions between the gate and the drain.
收稿日期: 2013-11-26
出版日期: 2014-02-28
:
85.30.Tv
(Field effect devices)
85.30.De
(Semiconductor-device characterization, design, and modeling)
85.35.Be
(Quantum well devices (quantum dots, quantum wires, etc.))
引用本文:
. [J]. 中国物理快报, 2014, 31(03): 38501-038501.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/31/3/038501
或
https://cpl.iphy.ac.cn/CN/Y2014/V31/I03/38501
[1] Tian B L, Chen C, Zhang J H, Zhang W L and Liu X Z 2013 Chin. Phys. Lett. 30 026101 2009 Appl. Phys. Lett. 95 212101 2012 IEEE Trans. Electron Devices 59 1393 2013 Opt. Express 21 1606 International Conference on Signal Processing, Communication, Computing and Networking Technologies (ICSCCN 2011) (July 21–22 2011 Thuckafay, India) p 2692010 Solid-State Electron. 54 1339 2011 Chin. Phys. B 20 097203 2011 IEEE Trans. Electron Devices 58 460 2012 Acta Phys. Sin. 33 767 (in Chinese) 2011 Phys. Status Solidi C 8 453 2007 IEEE Electron Device Lett.r 28 189 2005 IEEE Trans. Electron Devices 52 2534 2006 IEEE Trans. Electron Devices 53 2207 IEEE Power Electron. Spec. Conf. (June 15–19 2008 Rhodes, Greece) p 21722008 Phys. Scr. 78 065802 2002 Phys. Status Solidi A 194 447 2005 IEEE Trans. Electron Devices 52 438 2009 Phys. Status Solidi C 6 S996
[1]
.
[2]
.
[3]
.
[4]
.
[5]
.
[6]
.
[7]
.
[8]
.
[9]
.
[10]
.
[11]
.
[12]
.
[13]
.
[14]
.
[15]
.
2014, Vol. 31 
