Abstract：A GaAs based high power distributed feedback (DFB) semiconductor laser with a second-order grating has been demonstrated. An output power of 150 mW at an injection current of 350 mA is realized with a 1-mm cavity length. With a new design of the waveguide structure, the DFB laser maintains a stable single longitudinal mode around 1060 nm with a side mode suppression ratio of larger than 50 dB.
(Efficiency, stability, gain, and other operational parameters)
引用本文:
. [J]. 中国物理快报, 2014, 31(2): 24203-024203.
ZHAI Teng, TAN Shao-Yang, LU Dan, WANG Wei, ZHANG Rui-Kang, JI Chen. High Power 1060 nm Distributed Feedback Semiconductor Laser. Chin. Phys. Lett., 2014, 31(2): 24203-024203.
2014, Vol. 31 
