Theoretical Study of Thermodynamics Properties and Bulk Modulus of SiC under High Pressure and Temperature
ZHANG Xu-Dong1** , CUI Shou-Xin2 , SHI Hai-Feng3,4
1 School of Science, Shenyang University of Technology, Shenyang 1108702 School of Physics Science and Information Technology, Liaocheng University, Liaocheng 2520593 School of Science, Jiangnan University, Wuxi 2141224 Eco-materials and Renewable Energy Research Center, Department of Physics, Nanjing University, Nanjing 210093
Abstract :In extended pressure and temperature ranges, a theoretical study of the isothermal bulk modulus of SiC in B 3 structure under high pressure and temperature is carried out by means of first-principles density functional theoretical calculations combined with the quasi-harmonic Debye model. Through the quasi-harmonic Debye model, the isothermal bulk modulus and its first and second pressure derivatives are successfully obtained. The thermodynamics properties of 3C-SiC are investigated in the pressure range of 0–100 GPa and the temperature range of 0–2000 K.
收稿日期: 2013-09-22
出版日期: 2014-01-28
:
64.70.kg
(Semiconductors)
64.30.Jk
(Equations of state of nonmetals)
65.20.De
(General theory of thermodynamic properties of liquids, including computer simulation)
65.40.De
(Thermal expansion; thermomechanical effects)
65.40.Ba
(Heat capacity)
[1] Addamino A, Marshall R C, Faust J W and Ryan C E 1974 Silicon Carbide (Columbia: University of South Carolina Press) [2] Wentzcovitch R M, Da Silva C R S and Chelikowsky J R 1998 Phys. Rev. Lett. 80 2149 [3] Str?ssner K and Cardon M 1987 Solid State Commun. 63 113 [4] Yoshida M, Onodera A, Ueno M and Shimomura O 1993 Phys. Rev. B 48 10587 [5] Sekine T and Kobayashi T 1997 Phys. Rev. B 55 8034 [6] Zhu Y Q, Sekine T, Kobayashi T and Takazawa E 1998 J. Mater. Sci. 33 5883 [7] Chang K J and Cohen M L 1987 Phys. Rev. B 35 8196 [8] Karch K, Bechstedt F, Pavone P and Strauch D 1996 Phys. Rev. B 53 13400 [9] Miao M S, Prikhodko M and Lambrecht W R L 2002 Phys. Rev. B 66 064107 [10] Miao M S and Lambrecht W R L 2006 Phys. Rev. B 74 235218 [11] Miao M S and Lambrecht W R L 2003 Phys. Rev. B 68 092103 [12] Durandurdu M 2007 Phys. Rev. B 75 235204 [13] Miao M S, Prikhodko M and Lambrecht W R L 2002 Phys. Rev. Lett. 88 189601 [14] Shimojo F, Ebbsj? I, Kalia R K, Nakano A and Vashishta P 2000 Phys. Rev. Lett. 84 3338 [15] Durandurdu M 2004 J. Phys.: Condens. Matter 16 4411 [16] Gavrilenko V I, Postnikov A V and Litovchenko V G 1990 Phys. Status Solidi B 162 477 [17] Bates W H, Bobbert P A and Van Haeringen W 1994 Phys. Rev. B 49 7564 [18] Park C H, Cheong B H, Lee K H and Chang K J 1994 Phys. Rev. B 49 4485 [19] Karch K, Wellenhofer G, Pavone P, R?ssler U and Strauch D 1994 Structural Electron. Properties SiC Polytypes: Proc. 22nd Int. Conf. on the Physics of Semiconductors (Vancouver) ed Lockwood D T (Singapore: World Scientific) [20] Dentener P J H and van Haeringer W 1986 Phys. Rev. B 33 2831 [21] Churcher N, Kunc K and Heine V 1986 J. Phys. C 19 4413 [22] Cheong B H, Chang K J and Cohen M L 1991 Phys. Rev. B 44 1053 [23] Benzair A and Aourag H 2002 Phys. Status Solidi B 231 411 [24] Khenata R, Baltache H, Sahnoun M, Driz M, Rérat M and Abbar B 2003 Physica B 336 321 [25] Sahnoun M, Khenata R, Baltache H, Rérat M and Abbar B 2005 Physica B 355 392 [26] Lambrecht W R L, Segall B and Van Schilfgaarde M 1991 Phys. Rev. B 44 3685 [27] Hao A M, Yang X C, Wang X M, Zhu Y and Liu R P 2010 J. Appl. Phys. 108 063531 [28] Gavrilenko V I, Frolov S I and Klyui N I 1993 Physica B 185 394 [29] Feldman D W, Parker Jr J H, Choyke W J and Patrick L 1968 Phys. Rev. 173 787 [30] Karch K, Pavone P, Wind W, Schütt O and Strauch D 1994 Phys. Rev. B 50 17054 [31] Wang C and Yu R 1996 Phys. Rev. B 53 5430 [32] Zhang X, Ying C and Li Z 2011 Solid State Commun. 151 1545 [33] Roy S B and Roy P B 1999 J. Phys.: Condens. Matter 11 10375 [34] Kumar M 2000 Phys. Chem. Miner. 27 650 [35] Kumar M 1996 Physica B 217 143 [36] Blanco M A, Francisco E and Lua?a V 2004 Comput. Phys. Commun. 158 57 [37] Payne M C, Teter M P, Allan D C and Joannopolos J D 1992 Rev. Mod. Phys. 64 1045 [38] Vanderbilt D 1990 Phys. Rev. B 41 7892 [39] Perdew J P and Wang Y 1992 Phys. Rev. B 45 13244 [40] Van Camp P E, Doren V E and Devreese J T 1986 Phys. Rev. B 34 1314 [41] Lu Y P, He D W, Zhu J and Yang X 2008 Physica B 403 3543 [42] Pandey R, Rérat M, Darrigan C and Causà M 2000 J. Appl. Phys. 88 6462 [43] Sekkal W and Zaoui A 2002 New J. Phys. 4 9 [44] Meijie T and Yip S 1995 Phys. Rev. B 52 15150 [45] Karch K, Pavone P, Wind W and Bechstedt F 1995 Int. J. Quantum Chem. 56 801 [46] Blanco M A, Martín Pendás A and Franco R 1996 J. Mol. Struct.: THEOCHEM 368 245 [47] Flórez M, Recio J M, Francisco E and Martín Pendás A 2002 Phys. Rev. B 66 144112 [48] Hill R 1952 Proc. Phys. Soc. London A 65 349 [49] Liu X K and Tang B 2013 Chin. Phys. Lett. 30 066201 [50] Barin I 1995 Thermochemical Date of Pure Substances 3rd edn (New York: VCH) [51] Jeanloz R 1979 J. Geophys. Res. 84 6059 [52] Dhoble A and Verma M P 1986 Phys. Status Solidi B 133 491 [53] Sherry A M and Kumar M 1991 Indian J. Pure Appl. Phys. 29 612 [54] Tang M and Yip S 1995 Phys. Rev. B 52 15150 [55] Karch K, Pavone P, Mayer A P, Bechstedt F and Strauch D 1996 Physica B 219 448
[1]
. [J]. 中国物理快报, 2018, 35(5): 56401-.
[2]
. [J]. 中国物理快报, 2016, 33(08): 86201-086201.
[3]
. [J]. 中国物理快报, 2013, 30(11): 117201-117201.
[4]
TANG Qi-Heng;YANG Tian-Yong;DING Lan. Mechanical Behavior of Nanometer Ni by Simulating Nanoindentation [J]. 中国物理快报, 2010, 27(2): 26104-026104.
[5]
CHEN Wei-Hua;HU Xiao-Dong;SHAN Xu-Dong;KANG Xiang-Ning;ZHOU Xu-Rong;ZHANG Xiao-Min;YU Tong-Jun;YANG Zhi-Jian;YOU Li-Ping;XUKe;ZHANG Guo-Yi. Shock-Assisted Superficial Hexagonal-to-Cubic Phase Transition in GaN/Sapphire Interface Induced by Using Ultra-violet Laser Lift-Off Techniques [J]. 中国物理快报, 2009, 26(1): 16203-016203.
[6]
TANG Qi-Heng. Molecular Dynamics Study of Mechanical Behaviour of Screw Dislocation during Cutting with Diamond Tip on Silicon [J]. 中国物理快报, 2008, 25(8): 2946-2949.