Enhanced Performance in Perovskite Organic Lead Iodide Heterojunction Solar Cells with Metal-Insulator-Semiconductor Back Contact
SHI Jiang-Jian1,2,3, DONG Wan4, XU Yu-Zhuan1,2,3, LI Chun-Hui1,2,3, LV Song-Tao1,2,3, ZHU Li-Feng1,2,3, DONG Juan1,2,3, LUO Yan-Hong1,2,3, LI Dong-Mei1,2,3, MENG Qing-Bo1,2,3**, CHEN Qiang4**
SHI Jiang-Jian, DONG Wan, XU Yu-Zhuan, LI Chun-Hui, LV Song-Tao, ZHU Li-Feng, DONG Juan, LUO Yan-Hong, LI Dong-Mei, MENG Qing-Bo, CHEN Qiang
1Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing 100190 2Beijing Key Laboratory for New Energy Materials and Devices, Beijing 100190 3Institute of Physics, Chinese Academy of Sciences, Beijing 100190 4Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600
Metal-insulator-semiconductor back contact has been employed for a perovskite organic lead iodide heterojunction solar cell, in which an ultrathin Al2O3 film as an insulating layer was deposited onto the CH3NH3PbI3 by atomic layer deposition technology. The light-to-electricity conversion efficiency of the devices is significantly enhanced from 3.30% to 5.07%. Further the impedance spectrum reveals that this insulating layer sustains part of the positive bias applied in the absorber region close to the back contact and decreases the carrier transport barrier, thus promoting transportation of carriers.
2013, Vol. 30 
