Abstract：Frequency-dependent capacitance and conductance measurements are performed on AlGaN/GaN high electron mobility transistors (HEMTs) and NbAlO/AlGaN/GaN metal-insulator-semiconductor HEMTs (MISHEMTs) to extract density and time constants of the trap states at NbAlO/AlGaN interface and gate/AlGaN interface with the gate-voltage biased into the accumulation region and that at the AlGaN/GaN interface with the gate-voltage biased into the depletion region in different circuit models. The measurement results indicate that the trap density at NbAlO/AlGaN interface is about one order lower than that at gate/AlGaN interface while the trap density at AlGaN/GaN interface is in the same order, so the NbAlO film can passivate the AlGaN surface effectively, which is consistent with the current collapse results.
. [J]. 中国物理快报, 2013, 30(12): 127302-127302.
FENG Qian, DU Kai, LI Yu-Kun, SHI Peng, FENG Qing. Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors. Chin. Phys. Lett., 2013, 30(12): 127302-127302.
2013, Vol. 30 
