High-Performance InTiZnO Thin-Film Transistors Deposited by Magnetron Sputtering
LIU Ao1,2 , LIU Guo-Xia1,2 , SHAN Fu-Kai1,2,3** , ZHU Hui-Hui1,2 , B. C. Shin3** , W. J. Lee3 , C. R. Cho4
1 College of Physics Science, Qingdao University, Qingdao 2660712 Lab of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 2660713 Electronic Ceramics Center, DongEui University, Busan 614714, South Korea4 College of Nanoscience and Nanotechnology, Pusan National University, Busan 609735, South Korea
Abstract ：InTiZnO thin-film transistors (ITZO TFTs) with Al2 O3 gate dielectrics are fabricated by magnetron sputtering at room temperature. The bottom-gate-type ITZO TFTs with amorphous Al2 O3 gate dielectrics are operated in the enhancement mode and exhibit a mobility of 50.4 cm2 /V?s, threshold voltage of 1.2 V, subthreshold swing of 94.5 mV/decade, and on/off-current ratio of 7× 106 . We believe that ITZO deposited at room temperature is an appropriate semiconductor material to produce high-mobility TFTs for developing flexible electronic devices.
收稿日期: 2013-04-15
出版日期: 2013-12-13
:
73.61.Ng
(Insulators)
73.40.Qv
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
78.40.Fy
(Semiconductors)
引用本文:
. [J]. 中国物理快报, 2013, 30(12): 127301-127301.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/30/12/127301
或
https://cpl.iphy.ac.cn/CN/Y2013/V30/I12/127301
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2013, Vol. 30 
