Abstract：A ridge waveguide distributed-feedback laser emitting at 1064 nm is demonstrated. Two low-temperature-grown In0.21Ga0.79As/GaAs quantum wells are employed as the active layer. A second-order grating is formed by holographic photolithography and wet-etching. The laser operates at a single-mode up to 255 mA, corresponding to an output power of 90 mW.
(Efficiency, stability, gain, and other operational parameters)
引用本文:
. [J]. 中国物理快报, 2013, 30(11): 114202-114202.
TAN Shao-Yang, ZHAI Teng, LU Dan, WANG Wei, ZHANG Rui-Kang, JI Chen. Fabrication and Characterization of High Power 1064-nm DFB Lasers. Chin. Phys. Lett., 2013, 30(11): 114202-114202.
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