Electrical Characteristics of High Mobility Si/Si0.5Ge0.5/SOI Quantum-Well p-MOSFETs with a Gate Length of 100 nm and an Equivalent Oxide Thickness of 1.1 nm
MU Zhi-Qiang, YU Wen-Jie**, ZHANG Bo, XUE Zhong-Ying, CHEN Ming
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
Abstract：Short-channel high-mobility Si/Si0.5Ge0.5/silicon-on-insulator (SOI) quantum-well p-type metal-oxide-semiconductor field effect transistors (p-MOSFETs) were fabricated and electrically characterized. The transistors show good transfer and output characteristics with Ion/Ioff ratio up to 105 and sub-threshold slope down to 100 mV/dec. HfO2/TiN gate stack is employed and the equivalent oxide thickness of 1.1 nm is achieved. The effective hole mobility of the transistors reaches 200 cm2/V?s, which is 2.12 times the Si universal hole mobility.
(Semiconductor-device characterization, design, and modeling)
引用本文:
. [J]. 中国物理快报, 2013, 30(10): 108502-108502.
MU Zhi-Qiang, YU Wen-Jie, ZHANG Bo, XUE Zhong-Ying, CHEN Ming. Electrical Characteristics of High Mobility Si/Si0.5Ge0.5/SOI Quantum-Well p-MOSFETs with a Gate Length of 100 nm and an Equivalent Oxide Thickness of 1.1 nm. Chin. Phys. Lett., 2013, 30(10): 108502-108502.
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