A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe
CHEN Ping1, ZHAO De-Gang1**, FENG Mei-Xin1,2, JIANG De-Sheng1, LIU Zong-Shun1, ZHANG Li-Qun2, LI De-Yao2, LIU Jian-Ping2, WANG Hui2, ZHU Jian-Jun2, ZHANG Shu-Ming2, ZHANG Bao-Shun2, YANG Hui1,2
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Key Laboratory of Nanodevices and Applications of CAS, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123
Abstract：An array of high power InGaN/GaN multi-quantum-well laser diodes with a broad waveguide is fabricated. The laser diode structure is grown on a GaN substrate by metal-organic chemical vapor deposition. The laser diode array consists of five emitter stripes which share common electrodes on one laser chip. The electrical and optical characteristics of the laser diode array are investigated under the pulse current injection with 10 kHz frequency and 100 ns pulse width. The laser diode array emits at the wavelength of 409 nm, which is located in the blue-violet region, and the threshold current is 2.9 A. The maximum output light peak power is measured to be 7.5 W at the wavelength of 411.8 nm under the current of 25 A.
. [J]. 中国物理快报, 2013, 30(10): 104205-104205.
CHEN Ping, ZHAO De-Gang, FENG Mei-Xin, JIANG De-Sheng, LIU Zong-Shun, ZHANG Li-Qun, LI De-Yao, LIU Jian-Ping, WANG Hui, ZHU Jian-Jun, ZHANG Shu-Ming, ZHANG Bao-Shun, YANG Hui. A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe. Chin. Phys. Lett., 2013, 30(10): 104205-104205.
[1] Nakamura S, Senoh N, Iwasa N and Nagahama S I 1995 Jpn. J. Appl. Phys.34 L797 [2] Parish G, Keller S, Kozodoy P, Ibbetson J P, Marchand H, Fini P T, Fleischer S B, DenBaars S P, Mishra U K and Tarsa E J 1999 Appl. Phys. Lett.75 247 [3] Nakamura S 1999 Semicond. Sci. Technol.14 R27 [4] Li X Y, Xu J T, Tang Y W, Li X, Zhang Y, Gong H M, Zhao D G and Yang H 2006 Infrared Laser Eng.35 276 [5] Nakamura S, Senoh M, Nagahama S I, Iwasa N, Yamada T, Matsushita T, Kiyoku H and Sugimoto Y 1996 Jpn. J. Appl. Phys.35 L74 [6] Nakamura S, Senoh M, Nagahama S I, Iwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y, Kozaki T, Umemoto H, Sano M and Chocho K 1998 Jpn. J. Appl. Phys.37 L309 [7] Holc K, Wisniewski P, Leszczynski M, Suski T, Grzegory I, Czernecki R, Grzanka S and Perlin P 2009 Phys. Status Solidi C 6 S837 [8] Goto S, Ohta M, Yabuki Y, Hoshina Y, Naganuma K, Tamamura K, Hashizu T and Ikeda M 2003 Phys. Status Solidi A 200 122 [9] Samonji K, Yoshida S, Hagino H, Yamanaka K and Takigawa S 2012 Proc. SPIE8277 82771K [10] Zeng C, Zhang S M, Ji L, Wang H B, Zhao D G, Zhu J J, Liu Z S, Jiang D S, Cao Q, Chong M, Duan L H, Wang H, Shi Y S, Liu S Y, Yang H and Chen L H 2010 Chin. Phys. Lett.27 114215 [11] Zeng C, Zhang S M, Wang H, Liu J P, Wang H B, Li Z C, Feng M X, Zhao D G, Liu Z S, Jiang D S and Yang H 2012 Chin. Phys. Lett.29 017301 [12] Piprek J 2003 Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation (San Diego: Academic Press) chap 9 p 198 [13] Zhang L Q, Zhang S M, Yang H, Cao Q, Ji L, Zhu J J, Liu Z S, Zhao D G, Jiang D S, Duan L H, Wang H, Shi Y S, Liu S Y, Chen L H and Liang J W 2008 Chin. Phys. Lett.25 1281 [14] Okamoto K, Kashiwagi J, Tanaka T and Kubota M 2009 Appl. Phys. Lett.94 071105 [15] Avramescu A, Lermer T, Müller J, Tautz S, Queren D, Lutgen S and Strau? U 2009 Appl. Phys. Lett.95 071103 [16] Queren D, Avramescu A, Brüderl G, Breidenassel A, Schillgalies M, Lutgen S and Strau? U 2009 Appl. Phys. Lett.94 08119 [17] Miyoshi T, Masui S, Okada T, Yanamoto T, Kozaki T, Nagahama S and Mukai T 2009 Appl. Phys. Express2 062201 [18] Tyagi A, Farrell R, Kelchner K, Huang C Y, Hsu P S, Haeger D, Hardy M, Holder C, Fujito K, Cohen D, Ohta H, Speck J, DenBaars S and Nakamura S 2010 Appl. Phys. Express3 011002 [19] Kelchner K, Farrell R, Lin Y D, Hsu P S, Hardy M, Wu F, Cohen D, Ohta H, Speck J, Nakamura S and DenBaars S 2010 Appl. Phys. Express3 092103 [20] Feng M X, Zhang S M, Jiang D S, Liu J P, Wang H, Zeng C, Li Z C, Wang H B, Wang F and Yang H 2012 Chin. Phys. B 21 084209 [21] Ji L, Zhang S M, Jiang D S, Liu Z S, Zhang L Q, Zhu J J, Zhao D G, Duan L H and Yang H 2010 Chin. Phys. Lett.27 054204
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