Enhanced Radiation Sensitivity in Short-Channel Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors
PENG Chao1,2**, ZHANG Zheng-Xuan1,2, HU Zhi-Yuan1,2, HUANG Hui-Xiang1, NING Bing-Xu1, BI Da-Wei1
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, Guangzhou 510610
Abstract：The total ionizing dose effects of partially depleted silicon-on-insulator (SOI) transistors in a 0.13 μm technology are studied by 60Co γ-ray irradiation. Radiation enhanced drain-induced barrier lowering (DIBL) under different bias conditions is related to the parasitic bipolar in the SOI transistor and oxide trapped charge in the buried oxide, and it is experimentally observed for short channel transistors. The enhanced DIBL effect manifests as the DIBL parameter increases with total dose. Body doping concentration is a key factor affecting the total ionizing dose effect of the transistor. The low body doping transistor exhibits not only significant front gate threshold voltage shift as a result of the coupling effect, but also great off-state leakage at high drain voltage due to the enhanced DIBL effect.
2013, Vol. 30 
