中国物理快报  2013, Vol. 30 Issue (9): 98502-098502    DOI: 10.1088/0256-307X/30/9/098502
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Enhanced Radiation Sensitivity in Short-Channel Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors
PENG Chao1,2**, ZHANG Zheng-Xuan1,2, HU Zhi-Yuan1,2, HUANG Hui-Xiang1, NING Bing-Xu1, BI Da-Wei1
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, Guangzhou 510610