Stress Distribution in GaN Films grown on Patterned Si (111) Substrates and Its Effect on LED Performance
CHEN Dan-Yang, WANG Li** , XIONG Chuan-Bing, ZHENG Chang-Da, MO Chun-Lan, JIANG Feng-Yi
National Engineering Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047
Abstract ：Crack free GaN films were grown on 1200× 1200 μm2 patterned Si (111) substrates and 36 light emitting diodes (LEDs) were fabricated in each pattern unit. Spatial distribution of the tensile stress in the pattern units and its influence on the LED performance are studied by micro-Raman and electroluminescence (EL). The Raman shift of the GaN E 2 mode shows that the tensile stress is the maximum at the center, partially relaxed at the edge, and further relaxed at the corner. With the stress relaxation, the EL wavelength has a significant blue shift and the luminous intensity shows a great enhancement.
收稿日期: 2013-04-26
出版日期: 2013-11-21
:
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
81.05.Ea
(III-V semiconductors)
71.20.Nr
(Semiconductor compounds)
78.55.Cr
(III-V semiconductors)
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2013, Vol. 30 
