The Growth and Fabrication of InGaN/GaN Multi-Quantum Well Solar Cells on Si(111) Substrates
LI Zhi-Dong1,2, XIAO Hong-Ling1,2**, WANG Xiao-Liang1,2,3,4, WANG Cui-Mei1,2, DENG Qing-Wen1,2 JING Liang1,2, DING Jie-Qin1,2, WANG Zhan-Guo1,2, HOU Xun4
1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083 3ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, Beijing 100083 4Xi'an Jiaotong University, Xi'an 710049
Abstract：Metalorganic chemical vapor deposition of a crack-free mirror-like surface of InGaN/GaN MQWs on Si (111) substrate is demonstrated, and an InGaN/GaN MQWs solar cell device is fabricated. Photo response measurement of the solar cell devices shows that the fill factor FF = 49.4%, open circuit voltage Voc=0.32 V, and short circuit current Jsc=0.07 mA/cm2, under AM 1.5 G illumination. In order to analyze the influence of material quality on the performance of solar cells, XRD, SEM and Raman scattering experiments are carried out. It is found that insertion of a proper top AlN layer can effectively improve the material quality, and therefore enhance the photovoltaic performance of the fabricated device.
. [J]. 中国物理快报, 2013, 30(6): 68402-068402.
LI Zhi-Dong, XIAO Hong-Ling, WANG Xiao-Liang, WANG Cui-Mei, DENG Qing-Wen JING Liang, DING Jie-Qin, WANG Zhan-Guo, HOU Xun . The Growth and Fabrication of InGaN/GaN Multi-Quantum Well Solar Cells on Si(111) Substrates. Chin. Phys. Lett., 2013, 30(6): 68402-068402.
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