The Valence Band Offset of an Al0.17Ga0.83N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy
WAN Xiao-Jia1, WANG Xiao-Liang1,2,3**, XIAO Hong-Ling1, WANG Cui-Mei1, FENG Chun1, DENG Qing-Wen1, QU Shen-Qi1, ZHANG Jing-Wen3, HOU Xun3, CAI Shu-Jun4, FENG Zhi-Hong4
1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, Beijing 100083 3School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049 4National Key Lab of ASIC, Shijiazhuang 050051
Abstract：The valence band offset (VBO) of an Al0.17Ga0.83N/GaN heterojunction is determined to be 0.13±0.07 eV by x-ray photoelectron spectroscopy. From the obtained VBO value, the conduction band offset (CBO) of ～0.22 eV is obtained. The results indicate that the Al0.17Ga0.83N/GaN heterojunction exhibits a type-I band alignment.
(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))
引用本文:
. [J]. 中国物理快报, 2013, 30(5): 57101-057101.
WAN Xiao-Jia, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, FENG Chun, DENG Qing-Wen, QU Shen-Qi, ZHANG Jing-Wen, HOU Xun, CAI Shu-Jun, FENG Zhi-Hong . The Valence Band Offset of an Al0.17Ga0.83N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy. Chin. Phys. Lett., 2013, 30(5): 57101-057101.
2013, Vol. 30 
