Optically Modulated Bistability in Quantum Dot Resonant Tunneling Diodes
WENG Qian-Chun1, AN Zheng-Hua2**, HOU Ying3, ZHU Zi-Qiang1
1Key Laboratory of Polar Materials and Devices (Ministry of Education), East China Normal University, Shanghai 200241 2Institute of Advanced Materials and State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 3Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210
Abstract：InAs quantum dots are introduced into resonant tunneling diodes to study the electronic transport behavior, and a wide bistability (ΔV～0.8 V) is observed in the negative differential resistance region. Based on an analytic model, we attribute the observed distinct bistability of a resonant tunneling diodes with quantum dots to the feedback dependence of energy of the electron-storing quantum dots on the tunneling current density. Meanwhile, we find that this wide bistable region can be modulated sensitively by light illumination and becomes narrower with increasing light intensity. Our results suggest that the present devices can be potentially used as sensitive photodetectors in optoelectronic fields.
2013, Vol. 30 
