High Quality Pseudomorphic In0.24 GaAs/GaAs Multi-Quantum-Well and Large-Area Transmission Electro-Absorption Modulators
YANG Xiao-Hong1**, LIU Shao-Qing1, NI Hai-Qiao2, LI Mi-Feng2, LI Liang1, HAN Qin1, NIU Zhi-Chuan2
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2State Key laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Abstract：The good quality of 200 pairs of highly strained In0.24GaAs/GaAs multi-quantum-well (MQW) structure is demonstrated by the x-ray diffraction and photoluminescence curves. Large-area modulators based on the pseudomorphic In0.24GaAs/GaAs MQW are designed and fabricated successfully, where the diameters are not less than 3 mm and the working wavelength is extended to 1064 nm. The single pass modulation depth is demonstrated to be 0.34 at 1064 nm at a reverse voltage of 80 V .
. [J]. 中国物理快报, 2013, 30(4): 46102-046102.
YANG Xiao-Hong, LIU Shao-Qing, NI Hai-Qiao, LI Mi-Feng, LI Liang, HAN Qin, NIU Zhi-Chuan. High Quality Pseudomorphic In0.24 GaAs/GaAs Multi-Quantum-Well and Large-Area Transmission Electro-Absorption Modulators. Chin. Phys. Lett., 2013, 30(4): 46102-046102.
2013, Vol. 30 
