The Effects of a Low-Temperature GaN Interlayer on the Performance of InGaN/GaN Solar Cells
LI Liang1, ZHAO De-Gang1**, JIANG De-Sheng1, LIU Zong-Shun1, CHEN Ping1, WU Liang-Liang1, LE Ling-Cong1, WANG Hui2, YANG Hui1,2
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 2Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123
Abstract：An InGaN/GaN p-i-n solar cell inserted with a 5-nm low-temperature (LT) GaN interlayer between the p-GaN cap layer and the InGaN i-layer is grown on a c-plane sapphire substrate by metal organic chemical vapor deposition. The effects of the LT GaN interlayer on the performance of the InGaN/GaN solar cells are investigated. It is found that the LT-GaN interlayer prevents the extension of threading dislocations from the InGaN layer to the p-GaN layer and improves the crystal quality of both the p-GaN cap layer and the InGaN i-layer, ultimately leading to an increasing external quantum efficiency and photocurrent density of the InGaN/GaN solar cells.
. [J]. Chin. Phys. Lett., 2013, 30(2): 28801-028801.
LI Liang, ZHAO De-Gang, JIANG De-Sheng, LIU Zong-Shun, CHEN Ping, WU Liang-Liang, LE Ling-Cong, WANG Hui, YANG Hui. The Effects of a Low-Temperature GaN Interlayer on the Performance of InGaN/GaN Solar Cells. Chin. Phys. Lett., 2013, 30(2): 28801-028801.
2013, Vol. 30 
