A Raman Study of the Origin of Oxygen Defects in Hexagonal Manganite Thin Films
CHEN Xiang-Bai1**, HIEN Nguyen Thi Minh2, YANG In-Sang2**, LEE Daesu3, NOH Tae-Won3
1Department of Nano Science & Mechanical Engineering and Nanotechnology Research Center,Konkuk University, Chungju 380-701, Korea 2Department of Physics and Division of Nano-Sciences, Ewha Womans University, Seoul 120-750, Korea 3ReCFI, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
Abstract：Oxygen defects are usually unavoidable when synthesizing oxide thin films. We study the origin of the oxygen defects in hexagonal manganite HoMnO3 epitaxial thin films through Raman scattering spectroscopy. Our results show that the oxygen defects in hexagonal HoMnO3 thin films have distinct effects on different phonon modes and on magnon scattering. Our analyses indicate that the oxygen defects in hexagonal HoMnO3 thin films mainly originate from the basal O3 and/or O4 oxygen vacancies. Furthermore, our analyses of oxygen defects predict that the Mn 3d orbitals would be more strongly hybridized with the apical O1 and/or O2 2p orbitals than the basal O3 and/or O4 2p orbitals. This prediction is consistent with our resonant Raman scattering study and earlier first-principle calculations of the electronic structures of hexagonal manganites.
. [J]. Chin. Phys. Lett., 2012, 29(12): 126103-126103.
CHEN Xiang-Bai, HIEN Nguyen Thi Minh, YANG In-Sang, LEE Daesu, NOH Tae-Won. A Raman Study of the Origin of Oxygen Defects in Hexagonal Manganite Thin Films. Chin. Phys. Lett., 2012, 29(12): 126103-126103.
[1] Lee S, Pirogov A, Kang M, Jang K H, Yonemura M, Kamiyama T, Cheong S W, Gozzo F, Shin N, Kimura H, Noda Y and Park J G 2008 Nature451 805 [2] Talbayev D, LaForge A D, Trugman S A, Hur N, Taylor A J, Averitt R D and Basov D N 2008 Phys. Rev. Lett.101 247601 [3] Nandi S, Kreyssig A, Tan L, Kim J W, Yan J Q, Lang J C, Haskel D, McQueeney R J and Goldman A I 2008 Phys. Rev. Lett.100 217201 [4] Fabrèges X, Petit S, Mirebeau I, Pailhès S, Pinsard L, Forget A, Fernandez-Diaz M T and Porcher F 2009 Phys. Rev. Lett.103 067204 [5] Lee D, Yoon A, Jang S Y, Yoon J G, Chung J S, Kim M, Scott J F and Noh T W 2011 Phys. Rev. Lett.107 057602 [6] Mu?oz A, Alonso J A, Martínez-Lope M J, Casáis M T, Martínez J L and Fernández-Díaz M T 2000 Phys. Rev. B 62 9498 [7] Park J, Park J G, Jeon G S, Choi H Y, Lee C, Jo W, Bewley R, McEwen K A and Perring T G 2003 Phys. Rev. B 68 104426 [8] Choi W S, Kim D G, Seo S S A, Moon S J, Lee D, Lee J H, Lee H S, Cho D Y, Lee Y S, Murugavel P, Yu J and Noh T W 2008 Phys. Rev. B 77 045137 [9] Lee J H, Murugavel P, Ryu H, Lee D, Jo J Y, Kim J W, Kim H J, Kim K H, Jo Y, Jung M H, Oh Y H, Kim Y W, Yoon J G, Chung J S and Noh T W 2006 Adv. Mater.18 3125 [10] Murugavel P, Lee J H, Lee D, Noh T W, Jo Y, Jung M H, Oh Y S and Kim K H 2007 Appl. Phys. Lett.90 142902 [11] Hien N T M, Chen X B, Hoang L H, Lee D, Jang S Y, Noh T W and Yang I S 2010 J. Raman Spectrosc.41 983 [12] Chen X B, Hien N T M, Lee D, Jang S Y, Noh T W and Yang I S 2010 New J. Phys.12 073046 [13] Hien N T M, Oh S Y, Chen X B, Lee D, Jang S Y, Noh T W and Yang I S 2011 J. Raman Spectrosc.42 1774 [14] Chen X B, Hien N T M, Lee D, Jang S Y, Noh T W and Yang I S 2011 Appl. Phys. Lett.99 052506 [15] Lee D, Lee J H, Murugavel P, Jang S Y, Noh T W, Jo Y, Jung M H, Ko Y D and Chung J S 2007 Appl. Phys. Lett.90 182504 [16] Jang S Y, Lee D, Lee J H, Noh T W, Jo Y, Jung M H and Chung J S 2008 Appl. Phys. Lett.93 162507 [17] Iliev M N, Lee H G, Popov V N, Abrashev M V, Hamed A, Meng R L and Chu C W 1997 Phys. Rev. B 56 2488 [18] Litvinchuk A P, Iliev M N, Popov V N and Gospodinov M M 2004 J. Phys.: Condens. Matter16 809 [19] Souchkov A B, Simpson J R, Quijada M, Ishibashi H, Hur N, Ahn J S, Cheong S W, Millers A J and Drew H D 2003 Phys. Rev. Lett.91 027203 [20] Kang J S, Han S W, Park J G, Wi S C, Lee S S, Kim G, Song H J, Shin H J, Jo W and Min B I 2005 Phys. Rev. B 71 092405 [21] Vermette J, Jandl S and Gospodinov M M 2008 J. Phys.: Condens. Matter20 425219
2012, Vol. 29 
