Abstract：A separate absorption, grading, charge and multiplication InGaAs/InP avalanche photodiode with ultra low dark current and high responsivity is demonstrated. It has a thin multiplication layer and a planar structure. Through the use of a well and a single floating guard ring to suppress edge breakdown, the device can easily be fabricated by one step epitaxial growth and one step diffusion. The dark current of a 30 μm diameter device is as low as 0.028 nA at punch-through and 0.1 nA at 90% of the breakdown voltage. The responsivity at 1.55 μm is 0.93 A/W at unity gain and the multiplication layer is estimated to be less than 300 nm.
(Molecular, atomic, ion, and chemical beam epitaxy)
引用本文:
. [J]. Chin. Phys. Lett., 2012, 29(11): 118503-118503.
LI Bin, YANG Huai-Wei, GUI Qiang, YANG Xiao-Hong, WANG Jie, WANG Xiu-Ping, LIU Shao-Qing, HAN Qin. Ultra Low Dark Current, High Responsivity and Thin Multiplication Region in InGaAs/InP Avalanche Photodiodes. Chin. Phys. Lett., 2012, 29(11): 118503-118503.
2012, Vol. 29 
