中国物理快报  2012, Vol. 29 Issue (9): 98503-098503    DOI: 10.1088/0256-307X/29/9/098503
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Performance Improvement of Ambipolar Organic Field Effect Transistors by Inserting a MoO3 Ultrathin Layer
TIAN Hai-Jun1, CHENG Xiao-Man1,2**, ZHAO Geng2, LIANG Xiao-Yu1, DU Bo-Qun2, WU Feng2
1Institute of Material Physics, Key Laboratory of Display Material and Photoelectric Devices (Ministry of Education), and Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384
2School of Science, Tianjin University of Technology, Tianjin 300384