A Self-Aligned Process to Fabricate a Metal Electrode-Quantum Dot/Nanowire-Metal Electrode Structure with 100% Yield
FU Ying-Chun1,2, WANG Xiao-Feng1, FAN Zhong-Chao1, YANG Xiang1, BAI Yun-Xia1, ZHANG Jia-Yong 1,2, MA Hui-Li1,2, JI An1, YANG Fu-Hua1,2**
1Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2The State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Abstract：Using lateral phase change random access memory (PCRAM) for demonstration, we report a self-aligned process to fabricate a metal electrode-quantum dot(QD)/nanowire(NW)-metal electrode structure. Due to the good confinement and coupling between the Ge2Sb2Te5 (GST) QD and the tungsten electrodes, the device shows a threshold current and voltage as small as 2.50 μA and 1.08 V, respectively. Our process is highlighted with good controllability and repeatability with 100% yield, making it a promising fabrication process for nanoelectronics.
. [J]. 中国物理快报, 2012, 29(9): 98102-098102.
FU Ying-Chun, WANG Xiao-Feng, FAN Zhong-Chao, YANG Xiang, BAI Yun-Xia, ZHANG Jia-Yong, MA Hui-Li, JI An, YANG Fu-Hua. A Self-Aligned Process to Fabricate a Metal Electrode-Quantum Dot/Nanowire-Metal Electrode Structure with 100% Yield. Chin. Phys. Lett., 2012, 29(9): 98102-098102.
2012, Vol. 29 
