Low Power and High Sensitivity MOSFET-Based Pressure Sensor
ZHANG Zhao-Hua** , REN Tian-Ling** , ZHANG Yan-Hong, HAN Rui-Rui, LIU Li-Tian
Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084
Abstract ：Based on the metal-oxide-semiconductor field effect transistor (MOSFET) stress sensitive phenomenon, a low power MOSFET pressure sensor is proposed. Compared with the traditional piezoresistive pressure sensor, the present pressure sensor displays high performances on sensitivity and power consumption. The sensitivity of the MOSFET sensor is raised by 87%, meanwhile the power consumption is decreased by 20%.
收稿日期: 2012-05-30
出版日期: 2012-07-31
:
85.85.+j
(Micro- and nano-electromechanical systems (MEMS/NEMS) and devices)
85.30.De
(Semiconductor-device characterization, design, and modeling)
85.30.Tv
(Field effect devices)
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2012, Vol. 29 
